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 LET19060C
RF POWER TRANSISTORS Ldmos Enhanced Technology
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * IS-97 CDMA PERFORMANCES POUT = 7.5 W EFF. = 18 % * EDGE PERFORMANCES POUT = 30 W EFF. = 25 % * GSM PERFORMANCES POUT = 65 W EFF. = 45 % * EXCELLENT THERMAL STABILITY * BeO FREE PACKAGE * INTERNAL INPUT/OUTPUT MATCHING * ESD PROTECTION PIN CONNECTION
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M265 epoxy sealed ORDER CODE LET19060C BRANDING LET19060C
DESCRIPTION The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET19060C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.
2 3 1. Drain 2. Source 3. Gate
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C)
Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 7 130 200 -65 to +150 Unit V V A W C C
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance 1.0 C/W
January, 24 2003
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LET19060C
ELECTRICAL SPECIFICATION (TCASE = 25 C) STATIC (Per Section)
Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS* COSS* CRSS Symbol VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V ID = 10 A VDS = 26 V VDS = 0 V ID = TBD ID = 2 A ID = 2 A VDS = 26 V VDS = 26 V VDS = 26 V f = 1 MHz f = 1 MHz f = 1 MHz 2.5 0.27 4.7 TBD TBD TBD Min. Typ. Max. Test Conditions Min. 65 6 1 4.5 Typ. Max. Unit V A A V V mho pF pF pF Unit
* Includes Internal Matching
Test Conditions
DYNAMIC (f = 2000 MHz)
P1dB D(1) Load mismatch VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD POUT = 60 W 70 45 75 50 10:1 W % VSWR
VDD = 26 V IDQ = TBD ALL PHASE ANGLES
DYNAMIC (f = 1930 - 1990 MHz)
P1dB GP D
(1)
VDD = 26 V VDD = 26 V VDD = 26 V
IDQ = TBD IDQ = TBD IDQ = TBD POUT = 60 W
60 11 40
65 13 45 7.5
W dB % W
POUT(CDMA)(2)
885 KHz < -47 dBc 1.25 MHz < -55 dBc 2.25 MHz < -55 dBc 885 KHz < -47 dBc 1.25 MHz < -55 dBc 2.25 MHz < -55 dBc
D(CDMA)(2)
18
%
DYNAMIC (f = 1805 - 1880 MHz)
P1dB GP D(1) POUT(EDGE) D(EDGE) VDD = 26 V VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD IDQ = TBD EVM < 3 % EVM < 3 % POUT = 60 W 60 11 45 30 25 65 13 W dB % W %
400 KHz < -60 dBc 600 KHz < -70 dBc 400 KHz < -60 dBc 600 KHz < -70 dBc
(1) 1 dB Compression point (2) IS-97 CDMA
Pilot, Sync, Paging, Traffic, Codes 8 Thru 13
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model 2/4 Class 2 M3
LET19060C M265 (.370 x .780 WIDE 2/L N/HERM W/FLG) MECHANICAL DATA
mm Inch MAX 12.83 5.33 9.91 20.02 34.16 0.15 1.14 1.70 4.32 9.53 28.19 3.51 MIN. .495 .170 .380 .772 1.335 .003 .035 .057 .125 .365 1.090 .118 TYP. MAX .505 .210 .390 .788 1.345 .006 .045 .067 .170 .375 1.110 .138
DIM.
A B C D E F G H I J K L
MIN. 12.57 4.32 9.65 19.61 33.91 0.08 0.89 1.45 3.18 9.27 27.69 3.00
TYP.
Ref. 1023153
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LET19060C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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